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Article Dans Une Revue Energy Procedia Année : 2013

A New Model for Light-induced Degradation by B-O Defects in p- and n-type Silicon

Keith Fraser
  • Fonction : Auteur
Danièle Blanc-Pélissier
Sébastien Dubois
  • Fonction : Auteur
  • PersonId : 1047907
  • IdRef : 159358787
Florent Tanay
  • Fonction : Auteur
M Lemiti

Résumé

Light-induced degradation of the carrier lifetime in silicon due to the formation of boron-oxygen defects has been investigated using photoluminescence measurements. A finite difference simulation method has also been created to test theoretical models of the factors controlling defect generation. Experimental photoluminescence data is compared with simulated results. It is found that the maximum defect density in both p-and n-type material can be described as a function of the hole density during degradation.

Dates et versions

hal-02018384 , version 1 (13-02-2019)

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Keith Fraser, Danièle Blanc-Pélissier, Sébastien Dubois, Jordi Veirman, Florent Tanay, et al.. A New Model for Light-induced Degradation by B-O Defects in p- and n-type Silicon. Energy Procedia, 2013, 3rd International Conference on Crystalline Silicon Photovoltaics (SiliconPV) March 2013 Hamelin, 38, pp.542-550. ⟨10.1016/j.egypro.2013.07.315⟩. ⟨hal-02018384⟩
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