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Article Dans Une Revue Nanotechnology Année : 2018

Dopant radial inhomogeneity in Mg-doped GaN nanowires

Catherine Bougerol
Nuria Garro
  • Fonction : Auteur
Bruno Daudin

Résumé

Using atom probe tomography, it is demonstrated that Mg doping of GaN nanowires grown by Molecular Beam Epitaxy results in a marked radial inhomogeneity, namely a higher Mg content in the periphery of the nanowires. This spatial inhomogeneity is attributed to a preferential incorporation of Mg through the m-plane sidewalls of nanowires and is related to the formation of a Mg-rich surface which is stabilized by hydrogen. This is further supported by Raman spectroscopy experiments which give evidence of Mg-H complexes in the doped nanowires. A Mg doping mechanism such as this, specific to nanowires, may lead to higher levels of Mg doping than in layers, boosting the potential interest of nanowires for light emitting diode applications.
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Dates et versions

hal-02016536 , version 1 (12-02-2019)

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Alexandra-Madalina Siladie, Lynda Amichi, Nicolas Mollard, Isabelle Mouton, Bastien Bonef, et al.. Dopant radial inhomogeneity in Mg-doped GaN nanowires. Nanotechnology, 2018, 29 (25), pp.255706. ⟨10.1088/1361-6528/aabbd6⟩. ⟨hal-02016536⟩
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