Molecular beam epitaxy of thin HfTe 2 semimetal films
Résumé
Epitaxial thin films of 1T-HfTe2semimetal are grown by MBE on AlN(0001) substrates. The measured in-planelattice parameter indicates an unstrainedfilm which is also azimuthallyaligned with the AlN substrate, albeit with an in-planemosaic spread,asit would be expected for van der Waals epitaxy.Angle resolved photoemission spectroscopy combined with first principles electronic bandstructurecalculations show steep linearly dispersing conduction and valence bands which cross near the Brillouin zone center,providing evidence that HfTe2/AlN is an epitaxial topological Dirac semimetal.
Domaines
Chimie-Physique [physics.chem-ph]| Origine | Fichiers produits par l'(les) auteur(s) |
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