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Article Dans Une Revue Journal of Crystal Growth Année : 2019

Heterogeneous twinning during directional solidification of multi-crystalline silicon

Résumé

Heterogeneous twinning nucleation from the wall or gas interface during directional solidification of silicon have been modelled, and further used to clarify the details of twining observed in situ in X-ray synchrotron imaging experiments (Tsoutsouva et al., 2016). It is found that the heterogeneous twinning from the wall/grains or wall/gas/grain trijunctions requires much lower undercoolings leading to much higher twinning probability. The lower attachment energy and the contact area are the key factors for the heterogeneous nucleation of twins.

Domaines

Matériaux
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Dates et versions

hal-02008617 , version 1 (05-02-2019)

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J. W. Jhang, Gabrielle Regula, Guillaume Reinhart, Nathalie Mangelinck-Noël, C. W. Lan. Heterogeneous twinning during directional solidification of multi-crystalline silicon. Journal of Crystal Growth, 2019, 508, pp.42-49. ⟨10.1016/j.jcrysgro.2018.12.005⟩. ⟨hal-02008617⟩
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