New Insights in Z2-FET Mechanisms at Variable Temperature - Archive ouverte HAL
Communication Dans Un Congrès Année : 2015

New Insights in Z2-FET Mechanisms at Variable Temperature

Résumé

The Z2-FET (Zero Impact Ionization and Subthreshold Slope FET), a recent sharp switching devicewith zero subthreshold swing and zero impact ionization, is considered for Electro-Static Discharge (ESD)protection of Fully Depleted SOI (FDSOI) circuits. We study the impact of low and high temperature on thedevice performance, showing its effect on the output characteristics, triggering voltage (VON) and leakagecurrent (ILeak).
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Dates et versions

hal-02008394 , version 1 (05-02-2019)

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Hassan El Dirani, L. Onestas, Philippe Ferrari, Sorin Cristoloveanu,, Y. Solaro, et al.. New Insights in Z2-FET Mechanisms at Variable Temperature. 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2015, Bologna, Italy. pp.153, ⟨10.1109/ULIS.2015.7063796⟩. ⟨hal-02008394⟩
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