GDNMOS and GDBIMOS devices for ESD protection in 28nm thin film UTBB FD-SOI technology - Archive ouverte HAL
Communication Dans Un Congrès Année : 2018

GDNMOS and GDBIMOS devices for ESD protection in 28nm thin film UTBB FD-SOI technology

Résumé

GDNMOS (Gated Diode merged NMOS) and GDBIMOS (Gated Diode merged BIMOS) were fabricated using the 28nm thin film UTBB FD-SOI CMOS technology. Different connectivity conditions were measured and simulated. The devices are reconfigurable and promising for ESD protection applications.
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Dates et versions

hal-02007252 , version 1 (05-02-2019)

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Louise de Conti, Sorin Cristoloveanu, Maud Vinet, Philippe Galy. GDNMOS and GDBIMOS devices for ESD protection in 28nm thin film UTBB FD-SOI technology. 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Mar 2018, Granada, Spain. pp.73-76, ⟨10.1109/ULIS.2018.8354737⟩. ⟨hal-02007252⟩
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