GDNMOS and GDBIMOS devices for ESD protection in 28nm thin film UTBB FD-SOI technology
Résumé
GDNMOS (Gated Diode merged NMOS) and GDBIMOS (Gated Diode merged BIMOS) were fabricated using the 28nm thin film UTBB FD-SOI CMOS technology. Different connectivity conditions were measured and simulated. The devices are reconfigurable and promising for ESD protection applications.