Toward Gated-Diode-BIMOS for thin silicon ESD protection in advanced FD-SOI CMOS technologies
Résumé
This paper presents a new device named the Gated Diode merged BIMOS (GDBIMOS) which is fabricated using the 28nm UTBB FD-SOI high-k metal gate CMOS technology. It is highly reconfigurable and topologically robust for ESD protection. The suitable ESD window is achieved thanks to doping adjustment and to different possible gate connections.