RF characterization of the substrate coupling noise between TSV and active devices in 3D integrated circuits - Archive ouverte HAL
Article Dans Une Revue Microelectronic Engineering Année : 2014

RF characterization of the substrate coupling noise between TSV and active devices in 3D integrated circuits

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hal-02003828 , version 1 (01-02-2019)

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Cédric Bermond, M. Brocard, T. Lacrevaz, A. Farcy, P. Le Maître, et al.. RF characterization of the substrate coupling noise between TSV and active devices in 3D integrated circuits. Microelectronic Engineering, 2014, 130, pp.74-81. ⟨10.1016/j.mee.2014.09.025⟩. ⟨hal-02003828⟩
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