We examine in detail the experimental setup for fast, in situ characterization of bare SOI substrates using the pseudo-MOSFET technique. Two main experimental conditions are analyzed: the back contact between the SOI wafer and the metal chuck, and the influence of probes placement (location and pressure) on the die surface. Static I-V and split-CV measurements are reported and the parameter extraction methods are update. We focus on the carrier mobility and define pragmatic guidelines for simple and accurate extraction.