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Communication Dans Un Congrès Année : 2014

Split-CV for pseudo-MOSFET characterization: Experimental setups and associated parameter extraction methods

Résumé

We examine in detail the experimental setup for fast, in situ characterization of bare SOI substrates using the pseudo-MOSFET technique. Two main experimental conditions are analyzed: the back contact between the SOI wafer and the metal chuck, and the influence of probes placement (location and pressure) on the die surface. Static I-V and split-CV measurements are reported and the parameter extraction methods are update. We focus on the carrier mobility and define pragmatic guidelines for simple and accurate extraction.
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Dates et versions

hal-02003797 , version 1 (01-02-2019)

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L. Pirro, I. Ionica, G. Ghibaudo, S. Cristoloveanu. Split-CV for pseudo-MOSFET characterization: Experimental setups and associated parameter extraction methods. 2014 International Conference on Microelectronic Test Structures (ICMTS), Mar 2014, Udine, Italy. pp.14-19, ⟨10.1109/ICMTS.2014.6841461⟩. ⟨hal-02003797⟩
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