Highly performant field-effect transistors based on Si nanonet: a novel approach for portable, easy-to-use and label-free DNA sensors - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2018

Highly performant field-effect transistors based on Si nanonet: a novel approach for portable, easy-to-use and label-free DNA sensors

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Matériaux
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hal-01981214 , version 1 (14-01-2019)

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  • HAL Id : hal-01981214 , version 1

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Thuy Nguyen, Monica Vallejo Pérez, Valérie Stambouli, Mireille Mouis, Bassem Salem, et al.. Highly performant field-effect transistors based on Si nanonet: a novel approach for portable, easy-to-use and label-free DNA sensors. International Workshop on Semi-conducting Nanomaterials for Health, Environment and Security Applications,, Nanonets2Sense, Nov 2018, Grenoble, France. ⟨hal-01981214⟩
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