A robustness study for 1.7 kV SiC MOSFETs is presented in this article. After evaluation of the critical energy required for failure, devices went under repetitive short-circuits conditions. Because those power switches went under very stressful mode, the monitoring of key parameters is required to analyze failures which in all occurrence seems to be related to the gate oxide. The strong impact of drain to source voltage on critical energy during short-circuit mode is also investigated. Additionally, test bench and protocols are detailed.