Anisotropic transport properties of quasiballistic InAs nanowires under high magnetic field - Archive ouverte HAL
Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2018

Anisotropic transport properties of quasiballistic InAs nanowires under high magnetic field

Résumé

The magnetoconductance of a long channel InAs nanowire based field effect transistor in the quasiballistic regime under large magnetic field is investigated. The quasi-1D nanowire is fully characterized by a bias voltage spectroscopy and measurements under magnetic field up to 50 T applied either perpendicular or parallel to the nanowire axis lifting the spin and orbital degeneracies of the subbands. Under normal magnetic field, the conductance shows quantized steps due to the backscattering reduction and a decrease due to depopulation of the 1D modes. Under axial magnetic field, a quasioscillatory behavior is evidenced due to the coupling of the magnetic field with the angular momentum of the wave function. In addition the formation of cyclotron orbits is highlighted under high magnetic field. The experimental results are compared with theoretical calculation of the 1D band structure and related parameters.

Dates et versions

hal-01980714 , version 1 (14-01-2019)

Identifiants

Citer

Florian Vigneau, Zaiping Zeng, Walter Escoffier, Philippe Caroff, Renaud Leturcq, et al.. Anisotropic transport properties of quasiballistic InAs nanowires under high magnetic field. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2018, 97 (12), pp.125308. ⟨10.1103/PhysRevB.97.125308⟩. ⟨hal-01980714⟩
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