We have developed the possibility of using healing phases on hot-carrier (HC) degraded transistors from devices to logic cells (1) by the combined effects of oxide charge neutralization and channel shortening (2) using back bias V-B sensing effects in forward (FBB) mode in 28 nm FDSOI CMOS node. This is done for DC to AC operations from Input-Output device (EOT = 3.6 nm) to core blocks (EOT = 135 nm) leading to an almost complete cure of HC damaged devices for digital application. Continuous or short sequences of healing phases help to regenerate HC degraded parameters (I-on, V-T) offering new perspectives for on time repeatedly cure digital operation as well as under some analog case. (C) 2016 Elsevier Ltd. All rights reserved.