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Communication Dans Un Congrès Année : 2018

Second Harmonic Generation: A Non-Destructive Characterization Method for Dielectric-Semiconductor Interfaces

D. Blanc-Pélissier
M. Lei
  • Fonction : Auteur
J. Changala
  • Fonction : Auteur

Résumé

This paper reviews the application of second harmonic generation (SHG) to characterize dielectric-semiconductor interfaces used in microelectronics and photovoltaics. Based on non-linear optics, the method is non-destructive, so particularly advantageous for thin films. The theoretical background shows the possibility to access the electric field at interfaces and consequently to have a non-destructive measurement for interface state densities or fixed charges in oxides. Two more detailed examples of application of SHG characterization will be shown: field-effect passivation of silicon using thin film deposited alumina and interface analysis of silicon-on-insulator substrates.
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Dates et versions

hal-01974421 , version 1 (08-01-2019)

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Citer

I. Ionica, D. Damianos, A. Kaminski-Cachopo, A. Bouchard, X. Mescot, et al.. Second Harmonic Generation: A Non-Destructive Characterization Method for Dielectric-Semiconductor Interfaces. 2018 International Semiconductor Conference (CAS), Oct 2018, Sinaia, Romania. pp.35-42, ⟨10.1109/SMICND.2018.8539758⟩. ⟨hal-01974421⟩
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