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Article Dans Une Revue IOP Conference Series: Materials Science and Engineering Année : 2010

Thermal instability of silicon-on-insulator thin films measured by low-energy electron microscopy

Résumé

Using low-energy electron microscopy (LEEM), we investigate the ultrahigh vacuum annealing of silicon-on-insulator (SOI) samples capped by a chemically-prepared oxide layer. Consistent with previous reports: (1) for T > 750 • C, the capping-oxide decomposes by void nucleation and growth, then (2) for T > 850 • C, the Si thin-film dewets from the SiO2 substrate. Here, we show that the morphological evolution of the surface during the dewetting process is dependent on the preparation of the SOI surface. Two dewetting pathways are evident in recent literature, we find that one evolution is characteristic of clean Si(100)-2 × 1 surfaces, while the other is correlated with surface contamination. Silicon thin-films, capped by ultra-thin oxide layers, are the basic building blocks of microelectronics. Microelectronic device fabrication requires thermal annealing steps, which may induce drastic morphological changes in these building blocks. Here, we explore the annealing behavior of oxide-capped silicon-on-insulator (SOI) films. During annealing at T > 750 • C, the oxide capping layer decomposes (Fig. 1(a)) by void nucleation and growth. Then at T > 850 • C, the Si thin film spontaneously dewets (Fig. 1(b)), forming an assembly of three dimensional Si nanocrystals. Previous works [1, 2, 3, 4, 5] have explored the thermal decomposition of ultrathin Si-oxide, and the subsequent dewetting of the Si (SOI) layer [6, 7]. Here, we report two results which, to our knowledge, have not been reported previously. During thermal decomposition of the capping oxide layer, the radii of the initial isolated voids obeys a r ∝ t 1/3 law. This exponent suggests that void growth is governed by diffusion of the decomposition product (SiO molecules) on the oxide outside the voids. The decomposition of the oxide exposes a 2 × 1 reconstructed surface, characteristic of clean Si(100), ideal for studying the mechanisms of the SOI dewetting process. The dewetting proceeds by the opening of square, crystallographically oriented holes, followed by a finger instability that leads to the formation of self-organized,
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Dates et versions

hal-01967071 , version 1 (04-01-2019)

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E. Bussmann, F. Cheynis, Frédéric Leroy, P. Muller. Thermal instability of silicon-on-insulator thin films measured by low-energy electron microscopy. IOP Conference Series: Materials Science and Engineering, 2010, 12, pp.012016. ⟨10.1088/1757-899x/12/1/012016⟩. ⟨hal-01967071⟩
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