Dual technological procedure for multijunction solar cell : InGaAs subcell Epitaxial Lift-Off combined with InP wafer recycling - Archive ouverte HAL
Communication Dans Un Congrès Année : 2018

Dual technological procedure for multijunction solar cell : InGaAs subcell Epitaxial Lift-Off combined with InP wafer recycling

Jean -Louis Leclercq
Michel Gendry
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hal-01963993 , version 1 (21-12-2018)

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  • HAL Id : hal-01963993 , version 1

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Francois Chancerel, Philippe Regreny, Jean -Louis Leclercq, Abdelatif Jaouad, M. Darnon, et al.. Dual technological procedure for multijunction solar cell : InGaAs subcell Epitaxial Lift-Off combined with InP wafer recycling. 14th International Conference on Concentrator Photovoltaic Systems CPV'14, Apr 2018, Puertollano, Spain. ⟨hal-01963993⟩
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