Communication Dans Un Congrès Année : 2017

Towards 500°C SPER activated devices for 3D sequential integration

V. Delaye
  • Fonction : Auteur
L. Brunet

Résumé

This work investigates the possibility to reduce the Solid Phase Epitaxy Regrowth (SPER) temperature for dopant activation needed in 3D sequential integration. The electrical results obtained on 28nm FDSOI devices show that 500°C SPER can yield similar performance to that of 600°C SPER and 1050°C spike anneal. This paper highlights the advantages of using a <;100>-oriented channel and tilted implantation to successfully reduce the SPER thermal budget. It also confirms that the channel can be used as a seed for the recrystallization. The analysis takes into account the SPER rate dependence on temperature, crystalline orientation, dopant type and dopant concentration.

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Dates et versions

hal-01959113 , version 1 (18-12-2018)

Identifiants

Citer

J. Micout, B. Sklenard, P. Batude, Rémy Berthelon, Quentin Rafhay, et al.. Towards 500°C SPER activated devices for 3D sequential integration. 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2017, Burlingame, CA, United States. pp.24.3, ⟨10.1109/S3S.2017.8309220⟩. ⟨hal-01959113⟩
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