Multi-Microscopy Study of the Influence of Stacking Faults and Three-Dimensional In Distribution on the Optical Properties of m-Plane InGaN Quantum Wells Grown on Microwire Sidewalls - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2016

Multi-Microscopy Study of the Influence of Stacking Faults and Three-Dimensional In Distribution on the Optical Properties of m-Plane InGaN Quantum Wells Grown on Microwire Sidewalls

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hal-01954240 , version 1 (13-12-2018)

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L. Mancini, Daniel Hernandez Maldonado, Williams Lefebvre, Jonathan Houard, Ivan Blum, et al.. Multi-Microscopy Study of the Influence of Stacking Faults and Three-Dimensional In Distribution on the Optical Properties of m-Plane InGaN Quantum Wells Grown on Microwire Sidewalls. Applied Physics Letters, 2016, 108 (4), pp.042102. ⟨10.1063/1.4940748⟩. ⟨hal-01954240⟩
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