Stability of GeTe-based phase change material stack under thermal stress: reaction with Ti studied by combined in-situ x-ray diffraction, sheet resistance and atom probe tomography - Archive ouverte HAL
Article Dans Une Revue 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Année : 2015

Stability of GeTe-based phase change material stack under thermal stress: reaction with Ti studied by combined in-situ x-ray diffraction, sheet resistance and atom probe tomography

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https://hal.science/hal-01951293

Soumis le : mardi 11 décembre 2018-12:32:52

Dernière modification le : lundi 10 juin 2024-16:58:03

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hal-01951293 , version 1 (11-12-2018)

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Dominique Mangelinck, Magali Putero, Marion Descoins, Carine Perrin-Pellegrino. Stability of GeTe-based phase change material stack under thermal stress: reaction with Ti studied by combined in-situ x-ray diffraction, sheet resistance and atom probe tomography. 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 2015, pp.71-73. ⟨10.1109/IITC-MAM.2015.7325629⟩. ⟨hal-01951293⟩

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