Growth of Ge 1− x Sn x Nanowires by Chemical Vapor Deposition via Vapor-Liquid-Solid Mechanism Using GeH 4 and SnCl 4 - Archive ouverte HAL Access content directly
Journal Articles physica status solidi (a) Year : 2018

Growth of Ge 1− x Sn x Nanowires by Chemical Vapor Deposition via Vapor-Liquid-Solid Mechanism Using GeH 4 and SnCl 4

Mohammed Zeghouane
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Nicolas Pauc
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hal-01948093 , version 1 (07-12-2018)

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Thibault Haffner, Mohammed Zeghouane, Franck Bassani, Pascal Gentile, Alban Gassenq, et al.. Growth of Ge 1− x Sn x Nanowires by Chemical Vapor Deposition via Vapor-Liquid-Solid Mechanism Using GeH 4 and SnCl 4. physica status solidi (a), 2018, 215 (1), pp.1700743. ⟨10.1002/pssa.201700743⟩. ⟨hal-01948093⟩
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