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Article Dans Une Revue Solid-State Electronics Année : 2018

Series resistance in different operation regime of junctionless transistors

Résumé

Operation mode dependent series resistance (Rsd) behavior of junctionless transistors (JLTs) has been discussed in detail. Rsd was increased for decreasing gate bias in bulk conduction regime, while a constant value of Rsd was found in accumulation operation mode. Those results were compared to conventional inversion-mode (IM) transistors, verified by 2D numerical simulation and temperature dependence of extracted Rsd. This work provides key information for a better understanding of JLT operation affected by Rsd effects with different state of conduction channel.
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Dates et versions

hal-01948025 , version 1 (07-12-2018)

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Dae-Young Jeon, So Jeong Jeon, Mireille Mouis, Sylvain Barraud, Gyu-Tae Kim, et al.. Series resistance in different operation regime of junctionless transistors. Solid-State Electronics, 2018, 141, pp.92-95. ⟨10.1016/j.sse.2017.12.013⟩. ⟨hal-01948025⟩
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