Article Dans Une Revue IEEE Electron Device Letters Année : 2017

Chaotic Behavior of Random Telegraph Noise in Nanoscale UTBB FD-SOI MOSFETs

Résumé

Low frequency noise in nanoscale fully depleted ultra-thin body and buried oxide n-MOSFETs is not as random (stochastic) as it appears to be. The fluctuation of the drain current in such nano-devices, under certain bias conditions, exhibits complex random telegraph noise (RTN) that is usually observed in chaotic systems. Indeed, the deterministic chaotic nature of this noise-like variation is confirmed by means of the combined calculation of established nonlinear dynamics metrics. Specifically, the correlation dimension, the phase portrait of the reconstructed chaotic attractor, and the Lyapunov spectrum, conclude for a hyperchaotic behavior of the complex RTN with fractal characteristics.

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Dates et versions

hal-01947995 , version 1 (07-12-2018)

Identifiants

Citer

Dimitrios Tassis, Stavros Stavrinides, Michael Hanias, Christoforos Theodorou, Gérard Ghibaudo, et al.. Chaotic Behavior of Random Telegraph Noise in Nanoscale UTBB FD-SOI MOSFETs. IEEE Electron Device Letters, 2017, 38 (4), pp.517-520. ⟨10.1109/LED.2017.2672783⟩. ⟨hal-01947995⟩
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