Article Dans Une Revue IEEE Electron Device Letters Année : 2017

Quantitative Analysis of La and Al Additives Role on Dipole Magnitude Inducing Vt Shift in High-K/Metal Gate Stack

Résumé

Voltage drop induced by an electrical dipole layer after the incorporation of La or Al in high-k/metal gate-stack has been measured on nominal and beveled-SiOx devices and linearly correlated to the effective La/Al dose into the high-k/SiOx stack determined through X-ray fluorescence spectroscopy. Electrical dipoles were experimentally estimated to be around -55 and +40 meV for each 1×10 14 at/cm 2 of effective La and Al dose, respectively.

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Dates et versions

hal-01947993 , version 1 (07-12-2018)

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Citer

C. Suarez-Segovia, C. Leroux, F. Domengie, G. Ghibaudo. Quantitative Analysis of La and Al Additives Role on Dipole Magnitude Inducing Vt Shift in High-K/Metal Gate Stack. IEEE Electron Device Letters, 2017, 38 (3), pp.379-382. ⟨10.1109/LED.2017.2651644⟩. ⟨hal-01947993⟩
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