Article Dans Une Revue IEEE Transactions on Electron Devices Année : 2016

Characterization and Modeling of NBTI in Nanoscale UltraThin Body UltraThin Box FD-SOI MOSFETs

Résumé

The negative bias temperature instability (NBTI) is investigated in ultrathin body ultrathin box (UTBB) fully depleted silicon-on-insulator (FD-SOI) p-MOSFETs with zero back gate bias and small drain bias voltage. The threshold voltage shifts during stress at different temperatures and gate bias voltage conditions show that the NBTI is dominated by the trapping of holes in preexisting traps of the gate dielectric, while the recovery transient follows a logarithmic-like time dependence. Considering the hole-trapping/detrapping mechanisms, NBTI modeling has been proposed capturing the temperature and gate voltage dependence.

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Dates et versions

hal-01947804 , version 1 (07-12-2018)

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Theano Karatsori, Christoforos Theodorou, Sebastien Haendler, Nicolas Planes, Gérard Ghibaudo, et al.. Characterization and Modeling of NBTI in Nanoscale UltraThin Body UltraThin Box FD-SOI MOSFETs. IEEE Transactions on Electron Devices, 2016, 63 (12), pp.4913-4918. ⟨10.1109/TED.2016.2620720⟩. ⟨hal-01947804⟩
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