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Article Dans Une Revue Solid-State Electronics Année : 2016

Characterization and modeling of drain current local variability in 28 and 14 nm FDSOI nMOSFETs

Résumé

In this paper, we present, for the first time, a detailed investigation of the drain current local variability in advanced n-MOS devices from 28 and 14 nm FDSOI technology nodes. A simple MOSFET compact model is built to reproduce the local variability Id–Vg characteristics of paired transistors using a Monte Carlo simulation with normally distributed MOSFET parameters (Vth, β and Rsd).
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Dates et versions

hal-01947676 , version 1 (07-12-2018)

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E.G. Ioannidis, S. Haendler, E. Josse, N. Planes, G. Ghibaudo. Characterization and modeling of drain current local variability in 28 and 14 nm FDSOI nMOSFETs. Solid-State Electronics, 2016, 118, pp.4-11. ⟨10.1016/j.sse.2016.01.002⟩. ⟨hal-01947676⟩
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