Resistive memory variability: A simplified trap-assisted tunneling model - Archive ouverte HAL
Article Dans Une Revue Solid-State Electronics Année : 2016

Resistive memory variability: A simplified trap-assisted tunneling model

Résumé

This work presents a model that allows to explain the resistance variability of OxRAM devices, both in high and low resistive states. This model is based on the calculation of a 3D resistance network, using trap assisted tunneling current. The stochastic nature of the resistance is captured by random placement of traps within a specific spatial distribution. The model is able to capture both cycle-to-cycle (temporal) and device-to-device (spatial) variability.
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Dates et versions

hal-01947671 , version 1 (07-12-2018)

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Daniele Garbin, Elisa Vianello, Quentin Rafhay, Mourad Azzaz, Philippe Candelier, et al.. Resistive memory variability: A simplified trap-assisted tunneling model. Solid-State Electronics, 2016, 115, pp.126-132. ⟨10.1016/j.sse.2015.09.004⟩. ⟨hal-01947671⟩
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