Article Dans Une Revue IEEE Transactions on Nanotechnology Année : 2015

Compact Model for Inversion Charge in III–V Bulk MOSFET Including Non-Parabolicity

Résumé

In this paper, Poisson-Schrödinger simulations of bulk MOSFETs with an InGaAs channel, including traps and nonparabolicity, are compared against experimental data. These simulations are later used to validate a compact model for the inversion charge in the channel as a function of the gate voltage. Finally, an expression for the long-channel drain current is derived from this inversion charge model, and confirmed with experimental data. This current model, adapted for alternative channel devices, is suitable for the evaluation of III-V MOSFET performance.

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Dates et versions

hal-01947645 , version 1 (07-12-2018)

Identifiants

Citer

Gaspard Hiblot, Gabriel Mugny, Quentin Rafhay, Frédéric Boeuf, Gérard Ghibaudo. Compact Model for Inversion Charge in III–V Bulk MOSFET Including Non-Parabolicity. IEEE Transactions on Nanotechnology, 2015, 14 (4), pp.768-775. ⟨10.1109/TNANO.2015.2444653⟩. ⟨hal-01947645⟩
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