Drain-Current Flicker Noise Modeling in nMOSFETs From a 14-nm FDSOI Technology - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue IEEE Transactions on Electron Devices Année : 2015

Drain-Current Flicker Noise Modeling in nMOSFETs From a 14-nm FDSOI Technology

Résumé

Extensive investigation of the drain-current low-frequency noise in n-channel MOSFETs issued from a 14-nm fully depleted silicon-on-insulator technology node has been carried out. The results demonstrate that the carrier number fluctuation (CNF) with correlated mobility fluctuations (CMFs) model accurately and continuously describes the 1/f noise from weak to strong inversion, from linear to saturation, and for all the back-bias conditions. It is shown that using only two parameters, i.e., the effective flat-band voltage spectral density SV fb,eff and CMF factor Ω eff , the CNF/CMF noise model can predict the transistor 1/f noise level of all channel dimensions and under any bias conditions. Thus, it can be easily used in SPICE noise modeling for circuit simulations.
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Dates et versions

hal-01947638 , version 1 (07-12-2018)

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Eleftherios Ioannidis, Christoforos Theodorou, Theano Karatsori, Sebastien Haendler, Charalabos Dimitriadis, et al.. Drain-Current Flicker Noise Modeling in nMOSFETs From a 14-nm FDSOI Technology. IEEE Transactions on Electron Devices, 2015, 62 (5), pp.1574-1579. ⟨10.1109/TED.2015.2411678⟩. ⟨hal-01947638⟩
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