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Article Dans Une Revue IEEE Transactions on Electron Devices Année : 2014

Low-Frequency Noise Sources in Advanced UTBB FD-SOI MOSFETs

Résumé

The low-frequency noise (LFN) sources in ultrathin body (8.7 nm) and buried oxide (10 nm) fully depleted silicon-on-insulator (UTBB FD-SOI) n- and p-channel MOSFETs are analyzed. Both flicker and Lorentzian-type noise were observed, showing a dependence on the channel dimensions and the front/back gate bias conditions. The flicker noise component can be described by the carrier number with correlated mobility fluctuations model considering contribution from both interfaces. The Lorentzian-type noise originates mainly from generation-recombination (g-r) traps in the Si film, uniformly distributed in thin layers next to the drain and source contacts, and in some cases from g-r traps located at the front Si/oxide interface. No different noise behavior was observed between n- and p-channel devices operating in front-gate mode. Finally, LFN comparison between FD-SOI devices of different technologies is presented for the first time, demonstrating the impact of the UTBB technology on the LFN properties.
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Dates et versions

hal-01947606 , version 1 (07-12-2018)

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Citer

Christoforos Theodorou, Eleftherios Ioannidis, François Andrieu, Thierry Poiroux, Olivier Faynot, et al.. Low-Frequency Noise Sources in Advanced UTBB FD-SOI MOSFETs. IEEE Transactions on Electron Devices, 2014, 61 (4), pp.1161-1167. ⟨10.1109/TED.2014.2307201⟩. ⟨hal-01947606⟩
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