Molecular beam deposition of LaAlO3 on silicon for sub-22nm CMOS technological nodes: Towards a perfect control of the oxide/silicon heterointerface - Archive ouverte HAL
Article Dans Une Revue Microelectronic Engineering Année : 2009

Molecular beam deposition of LaAlO3 on silicon for sub-22nm CMOS technological nodes: Towards a perfect control of the oxide/silicon heterointerface

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hal-01939932 , version 1 (29-11-2018)

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  • HAL Id : hal-01939932 , version 1

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S. Pelloquin, L. Becerra, Guillaume Saint-Girons, C. Plossu, N. Baboux, et al.. Molecular beam deposition of LaAlO3 on silicon for sub-22nm CMOS technological nodes: Towards a perfect control of the oxide/silicon heterointerface. Microelectronic Engineering, 2009, 86 (7-9), pp.1686-1688. ⟨hal-01939932⟩
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