Impact of a γ-Al2O3(001) barrier on LaAlO3 metal-oxide-semiconductor capacitor electrical properties
Résumé
Amorphous LaAlO3 high-κ oxides were grown in a molecular beam epitaxy reactor on p-Si(001) employing a thin γ-Al2O3 epitaxial layer as buffer. Interfaces are free of SiO2 and silicates and remain abrupt even after high temperature annealing as demonstrated by x-ray photoelectron spectroscopy. Electrical measurements performed on as-deposited samples reveal dielectric constant values close to the bulk ones, small equivalent oxide thickness, and low interface state densities. Some negative charges are present leading to a flatband voltage shift. Postdeposition annealing can correct this effect.
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