Article Dans Une Revue Electronics Letters Année : 2003

Room temperature laser operation of strained InGaAs∕GaAs QW structure monolithically grown by MOVCD on LE-PECVD Ge∕Si virtual substrate

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hal-01939874 , version 1 (29-11-2018)

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  • HAL Id : hal-01939874 , version 1

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Y. Chriqui, G. Saint-Girons, S. Bouchoule, J.-M. Moison, G. Isella, et al.. Room temperature laser operation of strained InGaAs∕GaAs QW structure monolithically grown by MOVCD on LE-PECVD Ge∕Si virtual substrate. Electronics Letters, 2003, 39 (23), pp.1658. ⟨hal-01939874⟩
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