Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD - Archive ouverte HAL Access content directly
Conference Papers Year : 2014

Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD

Abstract

Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD
No file

Dates and versions

hal-01936666 , version 1 (27-11-2018)

Identifiers

Cite

Pawel Kwasnicki, Roxana Arvinte, Herve Peyre, Marcin Zielinski, Leszek Konczewicz, et al.. Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD. HETEROSIC 2013, Jun 2013, nice, France. pp.51 - 55, ⟨10.4028/www.scientific.net/MSF.806.51⟩. ⟨hal-01936666⟩
38 View
0 Download

Altmetric

Share

Gmail Mastodon Facebook X LinkedIn More