p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum - Archive ouverte HAL Access content directly
Conference Papers Year : 2016

p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum

Marc Zielinski
  • Function : Author
Roxana Arvinte
Thierry Chassagne
  • Function : Author
  • PersonId : 860781
Leszek Konczewicz
  • Function : Author
  • PersonId : 861730
Sylvie Contreras
Sandrine Juillaguet
  • Function : Author
  • PersonId : 839245
Hervé Peyre
  • Function : Author
  • PersonId : 860706
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hal-01936467 , version 1 (27-11-2018)

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Marc Zielinski, Roxana Arvinte, Thierry Chassagne, Adrien Michon, Marc Portail, et al.. p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum. ICSCRM, Oct 2015, Giardini Naxos, France. pp.137 - 142, ⟨10.4028/www.scientific.net/MSF.858.137⟩. ⟨hal-01936467⟩
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