Analysis of short-term NBTI effect on the Single-Event Upset sensitivity of a 65nm SRAM using two-photon absorption - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2013

Analysis of short-term NBTI effect on the Single-Event Upset sensitivity of a 65nm SRAM using two-photon absorption

Résumé

We used two-photon absorption laser testing to characterize the effect of short-term NBTI aging on the SEU sensitivity of 65 nm CMOS SRAM cell. Results indicate a fast increase of SEU sensitivity due to aging.

Domaines

Electronique
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Dates et versions

hal-01935693 , version 1 (27-11-2018)

Identifiants

  • HAL Id : hal-01935693 , version 1

Citer

I. El Moukhtari, V. Pouget, F. Darracq, C. Larue, P. Perdu, et al.. Analysis of short-term NBTI effect on the Single-Event Upset sensitivity of a 65nm SRAM using two-photon absorption. IEEE RADECS, 2013, Oxford, United Kingdom. ⟨hal-01935693⟩
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