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Article Dans Une Revue Applied Physics Letters Année : 2010

End-of-range defects in germanium and their role in boron deactivation

Résumé

We investigated the thermal evolution of end-of-range EOR defects in germanium and their impact on junction thermal stability. After solid-phase epitaxial regrowth of a preamorphized germanium layer, EOR defects exhibiting dislocation loop-like contrast behavior are present. These defects disappear during thermal annealing at 400 ° C, while boron electrical deactivation occurs. After the whole defect population vanishes, boron reactivation is observed. These results indicate that germanium self-interstitials, released by EOR defects, are the cause of B deactivation. Unlike in Si, the whole deactivation/reactivation cycle in Ge is found to take place while the maximum active B concentration exceeds its solubility limit.
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Dates et versions

hal-01922899 , version 1 (14-11-2018)

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F. Panciera, P F Fazzini, M. Collet, J. Boucher, Eléna Bedel-Pereira, et al.. End-of-range defects in germanium and their role in boron deactivation. Applied Physics Letters, 2010, 97 (1), pp.012105. ⟨10.1063/1.3456537⟩. ⟨hal-01922899⟩
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