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Article Dans Une Revue Thin Solid Films Année : 2010

Atomic scale study of a MOS structure with an ultra-low energy boron-implanted silicon substrate

Résumé

In this study, a poly-silicon/oxide on silicon structure was analysed at the atomic scale by atom probe tomography (APT). Before oxidation and poly-silicon deposition, the silicon substrate was implanted with boron (500 eV, 1 × 10 15 at cm − 2), post-annealed (650 °C, 30 min, N 2) in order to get a high deactivation rate and to form boron clusters. A good agreement was obtained between the APT and secondary ion mass spectrometry analyses, although discrepancies are observed on the concentration profiles. Those discrepancies appear as boron-silicon clusters, lying on the (001) plane, as previously observed in the literature.

Dates et versions

hal-01922657 , version 1 (26-11-2018)

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Sébastien Duguay, M. Ngamo, P. F Fazzini, Fuccio Cristiano, K. Daoud, et al.. Atomic scale study of a MOS structure with an ultra-low energy boron-implanted silicon substrate. Thin Solid Films, 2010, 518 (9), pp.2398 - 2401. ⟨10.1016/j.tsf.2009.09.159⟩. ⟨hal-01922657⟩
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