Atomic scale study of a MOS structure with an ultra-low energy boron-implanted silicon substrate
Résumé
In this study, a poly-silicon/oxide on silicon structure was analysed at the atomic scale by atom probe tomography (APT). Before oxidation and poly-silicon deposition, the silicon substrate was implanted with boron (500 eV, 1 × 10 15 at cm − 2), post-annealed (650 °C, 30 min, N 2) in order to get a high deactivation rate and to form boron clusters. A good agreement was obtained between the APT and secondary ion mass spectrometry analyses, although discrepancies are observed on the concentration profiles. Those discrepancies appear as boron-silicon clusters, lying on the (001) plane, as previously observed in the literature.