Studies of implanted boron emitters for solar cell applications
Résumé
B implanted emitters are investigated in the back junction cell configuration and their material properties are tested in double side implanted Si wafers. B has been implanted at 5 keV at various dose conditions varying from 1 Â 10 14 up to 3 Â 10 15 at./cm 2 and activated at 10008C for 10 min. N-type 8 Â 8 cm 2 mono-crystalline cells are fabricated and measured. Both fill factor and efficiency increase for high-B doses. However, at 10 15 at./cm 2 B dose the V oc drops, which is in agreement with lifetime degradation in the wafer. Defect evolution simulations of B n I m clusters formation is correlated with lifetime degradation.