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Article Dans Une Revue Progress in Photovoltaics Année : 2012

Studies of implanted boron emitters for solar cell applications

B J Pawlak
  • Fonction : Auteur
T. Janssens
  • Fonction : Auteur
S. Singh
  • Fonction : Auteur
I. Kuzma-Filipek
  • Fonction : Auteur
J. Robbelein
  • Fonction : Auteur
E. Posthuma
  • Fonction : Auteur
J. Poortmans
  • Fonction : Auteur

Résumé

B implanted emitters are investigated in the back junction cell configuration and their material properties are tested in double side implanted Si wafers. B has been implanted at 5 keV at various dose conditions varying from 1 Â 10 14 up to 3 Â 10 15 at./cm 2 and activated at 10008C for 10 min. N-type 8 Â 8 cm 2 mono-crystalline cells are fabricated and measured. Both fill factor and efficiency increase for high-B doses. However, at 10 15 at./cm 2 B dose the V oc drops, which is in agreement with lifetime degradation in the wafer. Defect evolution simulations of B n I m clusters formation is correlated with lifetime degradation.

Dates et versions

hal-01922649 , version 1 (14-11-2018)

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Citer

B J Pawlak, T. Janssens, S. Singh, I. Kuzma-Filipek, J. Robbelein, et al.. Studies of implanted boron emitters for solar cell applications. Progress in Photovoltaics, 2012, 20 (1), pp.106 - 110. ⟨10.1002/pip.1106⟩. ⟨hal-01922649⟩
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