Correlation of Interface Characteristics to Electron Mobility in Channel-Implanted 4H-SiC Mosfets - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Materials Science Forum Année : 2013

Correlation of Interface Characteristics to Electron Mobility in Channel-Implanted 4H-SiC Mosfets

Résumé

To study mobility limiting mechanisms in (0001) 4H-SiC, lateral n-channel MOSFETs in p-implanted wells on n-type epitaxial layers were manufactured and additionally selectively shallow implanted with different nitrogen (N) doses in the channel region. The mobility was found to be limited by Columbic scattering at low electric fields. Further surface roughness scattering was considered as a possible mobility degradation mechanism at high electric fields. First investigations of the SiC surface by atomic force microscopy (AFM) in the channel region after implantation, anneal-ing, and gate oxide removal revealed a rather rough topology. This could lead to fluctuations in the surface potential at the SiC/SiO 2 interface, thus accounting in part for surface roughness scattering.
Fichier non déposé

Dates et versions

hal-01921853 , version 1 (26-11-2018)

Identifiants

Citer

Christian Strenger, Viktoryia Uhnevionak, Alex Burenkov, Anton J Bauer, Vincent Mortet, et al.. Correlation of Interface Characteristics to Electron Mobility in Channel-Implanted 4H-SiC Mosfets. Materials Science Forum, 2013, 740-742, pp.537 - 540. ⟨10.4028/www.scientific.net/msf.740-742.537⟩. ⟨hal-01921853⟩
48 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More