Extended defects and precipitation in heavily B-doped silicon
Résumé
The boron precipitation phenomenon in highly supersaturated boron-implanted silicon (10 keV B + , 5×10 15 ions/cm 2) has been investigated by means of atom probe tomography, transmission electron microscopy and secondary ion mass spectrometry. We demonstrate that (001) dislocation loops observed by transmission electron microscopy in the region close to the boron projected range and boron precipitates ((001)-platelets) observed by atom probe are the same objects. For sufficiently high thermal budgets (900 °C for 5 h), boron precipitates close to the stoichiometric SiB 3 composition have been observed, indicating that the precipitation induced by high-dose boron implantation can lead to the formation of a stable phase.