Effects of proton irradiation on 60 GHz CMOS transceiver chip for multi-Gbps communication in high-energy physics experiments - Archive ouverte HAL
Article Dans Une Revue The Journal of Engineering Année : 2019

Effects of proton irradiation on 60 GHz CMOS transceiver chip for multi-Gbps communication in high-energy physics experiments

D. Dancila
  • Fonction : Auteur
L. Gustaffson
  • Fonction : Auteur
D. Röhrich
  • Fonction : Auteur
K. Ullaland
  • Fonction : Auteur
S. Yang
R. Brenner
  • Fonction : Auteur

Résumé

This paper presents the experimental results of $17~MeV$ proton irradiation on a $60~GHz$ low power, half-duplex transceiver (TRX) chip implemented in $65~nm$ CMOS technology. It supports short range point-to-point data rate up to $6~Gbps$ by employing on-off keying (OOK). To investigate the irradiation hardness for high energy physics applications, two TRX chips were irradiated with total ionizing doses (TID) of $74~kGy$ and $42~kGy$ and fluence of $1.4~\times$10$^{14}~ N_{eq}/cm^2$ and $0.8~\times$10$^{14}~N_{eq}/cm^2$ for RX and TX modes, respectively. The chips were characterized by pre- and post-irradiation analogue voltage measurements on different circuit blocks as well as through the analysis of wireless transmission parameters like bit error rate (BER), eye diagram, jitter etc. Post-irradiation measurements have shown certain reduction in performance but both TRX chips have been found operational through over the air measurements at $5~Gbps$. Moreover, very small shift in the carrier frequency was observed after the irradiation.
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hal-01921733 , version 1 (30-09-2024)

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I. Aziz, D. Dancila, S. Dittmeier, A. Siligaris, C. Dehos, et al.. Effects of proton irradiation on 60 GHz CMOS transceiver chip for multi-Gbps communication in high-energy physics experiments. The Journal of Engineering, 2019, 2019 (8), pp.5391-5396. ⟨10.1049/joe.2018.5402⟩. ⟨hal-01921733⟩
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