Ultrafast Generation of Unconventional { 001 } Loops in Si - Archive ouverte HAL
Article Dans Une Revue Physical Review Letters Année : 2017

Ultrafast Generation of Unconventional { 001 } Loops in Si

Résumé

Ultrafast laser annealing of ion implanted Si has led to thermodynamically unexpected large f001g self-interstitial loops, and the failure of Ostwald ripening models for describing self-interstitial cluster growth. We have carried out molecular dynamics simulations in combination with focused experiments in order to demonstrate that at temperatures close to the melting point, self-interstitial rich Si is driven into dense liquidlike droplets that are highly mobile within the solid crystalline Si matrix. These liquid droplets grow by a coalescence mechanism and eventually transform into f001g loops through a liquid-to-solid phase transition in the nanosecond time scale
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Dates et versions

hal-01921215 , version 1 (27-05-2019)

Identifiants

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Luis Marques, María Aboy, Iván Santos, Pedro López, Fuccio Cristiano, et al.. Ultrafast Generation of Unconventional { 001 } Loops in Si. Physical Review Letters, 2017, 119 (20), pp.205503. ⟨10.1103/physrevlett.119.205503⟩. ⟨hal-01921215⟩
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