In-plane InSb nanowires grown by selective area molecular beam epitaxy on semi-insulating substrate - Archive ouverte HAL
Article Dans Une Revue Nanotechnology Année : 2018

In-plane InSb nanowires grown by selective area molecular beam epitaxy on semi-insulating substrate

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hal-01919495 , version 1 (12-11-2018)

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L. Desplanque, Alexandre Bucamp, David Troadec, Gilles Patriarche, X. Wallart. In-plane InSb nanowires grown by selective area molecular beam epitaxy on semi-insulating substrate. Nanotechnology, 2018, 29 (30), ⟨10.1088/1361-6528/aac321⟩. ⟨hal-01919495⟩
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