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Article Dans Une Revue MRS Advances Année : 2016

Thin n/p GaAs Junctions for Novel High-Efficiency Phototransducers Based on a Vertical Epitaxial Heterostructure Architecture

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hal-01918146 , version 1 (09-11-2018)

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A. York, F. Proulx, D. Masson, A. Jaouad, B. Bouzazi, et al.. Thin n/p GaAs Junctions for Novel High-Efficiency Phototransducers Based on a Vertical Epitaxial Heterostructure Architecture. MRS Advances, 2016, 1 (14), pp.881 - 890. ⟨10.1557/adv.2016.9⟩. ⟨hal-01918146⟩
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