Development of technological building blocks for the monolithic integration of ammonia-MBE-grown GaN-HEMTs with silicon CMOS - Archive ouverte HAL
Article Dans Une Revue Physica Status Solidi A (applications and materials science) Année : 2016

Development of technological building blocks for the monolithic integration of ammonia-MBE-grown GaN-HEMTs with silicon CMOS

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Sciences de l'ingénieur [physics]

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https://hal.science/hal-01918142

Soumis le : vendredi 9 novembre 2018-21:31:45

Dernière modification le : mardi 24 septembre 2024-16:46:17

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hal-01918142 , version 1 (09-11-2018)

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Rémi Comyn, Yvon Cordier, Sébastien Chenot, Abdelatif Jaouad, Hassan Maher, et al.. Development of technological building blocks for the monolithic integration of ammonia-MBE-grown GaN-HEMTs with silicon CMOS. Physica Status Solidi A (applications and materials science), 2016, 213 (4), pp.917 - 924. ⟨10.1002/pssa.201532732⟩. ⟨hal-01918142⟩

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