Focused gas beam injection for efficient ammonia-molecular beam epitaxial growth of III-nitride semiconductors - Archive ouverte HAL
Article Dans Une Revue Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics Année : 2016

Focused gas beam injection for efficient ammonia-molecular beam epitaxial growth of III-nitride semiconductors

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hal-01918139 , version 1 (09-11-2018)

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Abderrahim Rahim Boucherif, Maxime Rondeau, Hubert Pelletier, Philippe-Olivier Provost, Abderraouf A Boucherif, et al.. Focused gas beam injection for efficient ammonia-molecular beam epitaxial growth of III-nitride semiconductors. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2016, 34 (2), ⟨10.1116/1.4943921⟩. ⟨hal-01918139⟩
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