Large scale textured GaP(114) growth on vicinal Si substrate by Molecular Beam Epitaxy for water splitting applications
Résumé
Solar photoelectrochemical (PEC) water-splitting devices have been studied for decades with the aim to convert and store the solar energy into clean hydrogen fuels. Recently GaP-based PEC devices have been proposed, because of the adapted GaP bandgap (2.25eV). Moreover, surface texturation at the electrode level has been investigated to optimize the PEC devices efficiency. In this work, we present a large scale stress-free GaP textured surface grown by Molecular Beam Epitaxy on vicinal Si substrate. We then explain the GaP{114} facets stability by density functional theory, we finally present the advantages of using this textured surface, in water splitting applications.