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Article Dans Une Revue Solid-State Electronics Année : 2013

Monte Carlo analysis of the dynamic behavior of III–V MOSFETs for low-noise RF applications

Résumé

III-V Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) with a high-j dielectric gate stack are investigated as a possible route to enhance the performance of either microwave or logic circuits with low supply voltage (V DD). The intrinsic performance of III-V MOSFETs in both static and dynamic regimes under low V DD is estimated using device Monte Carlo simulation. The characteristics of a Bulk-like and XOI-like III-V MOSFETs are quantitatively assessed and compared in terms of DC transconductance, high frequency performance and noise behavior. Finally, the comparison with Si-based devices shows the potential of III-V nano-MOSFET architectures for high-frequency and low noise application under low operating power.
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Dates et versions

hal-01910206 , version 1 (06-11-2018)

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Ming Shi, Jérôme Saint-Martin, Arnaud Bournel, Damien Querlioz, Nicolas Wichmann, et al.. Monte Carlo analysis of the dynamic behavior of III–V MOSFETs for low-noise RF applications. Solid-State Electronics, 2013, 87, pp.51 - 57. ⟨10.1016/j.sse.2013.05.004⟩. ⟨hal-01910206⟩
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