GaInSb/AlGaAsSb strained quantum well semiconductor lasers for 1.55~μm operation - Archive ouverte HAL
Article Dans Une Revue Semiconductor Science and Technology Année : 1999

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hal-01904237 , version 1 (24-10-2018)

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Guilhem Almuneau, F. Genty, A. Wilk, P. Grech, A. Joullié, et al.. GaInSb/AlGaAsSb strained quantum well semiconductor lasers for 1.55~μm operation. Semiconductor Science and Technology, 1999, 14, pp.89--92. ⟨10.1088/0268-1242/14/1/014⟩. ⟨hal-01904237⟩
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