Electrical characterization of undoped diamond films for RF MEMS application - Archive ouverte HAL
Communication Dans Un Congrès Année : 2013

Electrical characterization of undoped diamond films for RF MEMS application

Résumé

Diamond films are considered as superior dielectric in comparison to Si3N4 for MEMS applications. The present paper provides a detail characterization study of electrical properties of undoped microcrystalline diamond films involving dc and charge/discharge transient analysis over a wide temperature range. The aim of the study is to provide a better insight on the physical mechanisms responsible for the charge injection and collection processes under different operation conditions applicable to MEMS capacitive switches.
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Dates et versions

hal-01902644 , version 1 (23-10-2018)

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Citer

L. Michalas, M. Koutsoureli, E. Papandreou, G. Papaioannou, Samuel Saada, et al.. Electrical characterization of undoped diamond films for RF MEMS application. 2013 IEEE International Reliability Physics Symposium (IRPS), Apr 2013, Anaheim, United States. pp.6532049, ⟨10.1109/IRPS.2013.6532049⟩. ⟨hal-01902644⟩
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